个人介绍

杨鹏，理学博士，2020年获复旦大学微电子学与固体电子学专业博士学位，荣获复旦大学优秀毕业生。2022年受聘为suncitygroup太阳新城助理教授。聚焦于新型二维半导体材料的制备及其在微纳电子器件、光电子器件、忆阻器等领域的应用研究。

截至2024年12月，在国内外知名期刊上发表论文30余篇，其中第一/通讯作者文章10篇, h指数为17。发表文章期刊包含Nature Communications、Advanced Materials、ACS Nano、Nano-Micro Letters、Nano Energy、Nano Research、Nanoscale等。申请国家发明专利4项，已授权3项。主持多项国家级、省市级科研项目。

教育及工作经历

      2022.12至今，suncity太阳新城，助理教授

      2021.6-2022.6，香港城市大学，访问学者

      2020.12-2022.11，深圳大学，博士后

      2020.9，微电子学与固体电子学博士（复旦大学）

研究领域

二维半导体材料的控制生长及其在微纳电子器件、光电探测器、忆阻器等领域的应用研究。欢迎具有微电子、物理、材料、化学等相关专业背景的本科生、硕士生加入团队。

代表性文章 

[1]. Haoxin Huang#, Jiajia Zha#, Songcen Xu, Peng Yang*, Yunpeng Xia, Huide Wang, Dechen Dong, Long Zheng, Yao Yao, Yuxuan Zhang, Ye Chen, Johnny C Ho, Hau Ping Chan, Chunsong Zhao*, Chaoliang Tan*. Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline SexTe1–x Nanosheets for p-Type Transistors and Inverters. ACS Nano 2024, 18, 17293-17303.

[2]. Peng Yang#, Yudong Pang#, Jiajia Zha, Haoxin Huang, Zhendong Jiang, Meng Zhang, Chaoliang Tan*, Wugang Liao*. Mechanisms of Current Fluctuation in High-Mobility p-Type Tellurium Field-Effect Transistors. IEEE Transactions on Electron Devices 2024, 71, 6417-6423.

[3]. Peng Yang, Jiajia Zha*, Guoyun Gao, Long Zheng, Haoxin Huang, Yunpeng Xia, Songcen Xu, Tengfei Xiong, Zhuomin Zhang, Zhengbao Yang, Ye Chen, Dong-Keun Ki, Juin J. Liou, Wugang Liao*, Chaoliang Tan*. Growth of tellurium nanobelts on hexagonal boron nitride for p-type field-effect transistors with ultrahigh hole mobility. Nano-Micro Letters 2022, 14, 109.

[4]. Peng Yang^#, Ai-Guo Yang^#, Lingxiu Chen, Jing Chen, Youwei Zhang, Haomin Wang, Laigui Hu, Rong-Jun Zhang, Ran Liu, Xin-Ping Qu*, Zhi-Jun Qiu*, Chunxiao Cong*. Influence of seeding promoters on the properties of CVD grown monolayer molybdenum disulfide. Nano Research 2019, 12, 823-827.

[5]. Peng Yang, Yabing Shan, Jing Chen, Garel Ekoya, Jinkun Han, Zhi-Jun Qiu, Junjie Sun, Fei Chen, Haomin Wang, Wenzhong Bao, Laigui Hu, Rong-Jun Zhang, Ran Liu, Chunxiao Cong*. Remarkable quality improvement of as-grown monolayer MoS₂ by sulfur vapor pretreatment of SiO₂/Si substrate. Nanoscale 2020, 12, 1958-1966.

[6]. Peng Yang^#, Haifeng Yang^#, Zhengyuan Wu, Fuyou Liao, Xiaojiao Guo, Jianan Deng, Qiang Xu, Haomin Wang, Junjie Sun, Fei Chen, Wenzhong Bao, Laigui Hu, Zhongkai Liu, Yulin Chen, Zhi-Jun Qiu, Zhilai Fang, Ran Liu*, Chunxiao Cong*. Large-area monolayer MoS₂ nanosheets on GaN substrates for light-emitting diodes and valley-spin electronic devices. ACS Applied Nano Materials 2021, 4(11) 12127–12136.

[7]. Peng Yang, Tianru Wu, Haomin Wang, Guangyuan Lu, Lianwen Deng*, Shengxiang Huang. Synthesis of multilayer hexagonal boron nitride on Cu-Ni alloy by chemical vapor deposition. Chinese Science Bulletin 2017, 62, 2279-2286.

[8]. Yudong Pang; Wugang Liao; Xiaopei Chen; Tingke Rao; Xiongfeng Wang; Guocheng Bao; Peng Yang*. Negative-bias-stress-induced current instability in quasi-2D tellurium field-effecttransistors, 2023 6th International Conference on Electronics Technology (ICET), Chengdu, China.

[9]. Jie Jiang, Peng Yang, Juin J. Liou, Wugang Liao*, Yang Chai*, Defect engineering of two-dimensional materials towards next-generation electronics and optoelectronics. Nano Research 2022, 16, 3104-3124.

[10]. Jiajia Zha#, Shuhui Shi#, Apoorva Chaturvedi#, Haoxin Huang, Peng Yang, Yao Yao, Siyuan Li, Yunpeng Xia, Zhuomin Zhang, Wei Wang, Huide Wang, Shaocong Wang, Zhen Yuan, Zhengbao Yang, Qiyuan He, Huiling Tai, Edwin Hang Tong Teo, Hongyu Yu, Johnny C Ho, Zhongrui Wang*, Hua Zhang*, Chaoliang Tan*. Electronic/Optoelectronic Memory Device Enabled by Tellurium‐based 2D van der Waals Heterostructure for in-Sensor Reservoir Computing at the Optical Communication Band. Advanced Materials 2023, 35, 22111598.

[11]. Yunpeng Xia#, Ning Lin#, Jiajia Zha*, Haoxin Huang, Yiwen Zhang, Handa Liu, Jinyi Tong, Songcen Xu, Peng Yang, Huide Wang, Long Zheng, Zhuomin Zhang, Zhengbao Yang, Ye Chen, Hau Ping Chan, Zhongrui Wang*, Chaoliang Tan*. 2D reconfigurable memory device enabled by defect engineering for multifunctional neuromorphic computing. Advanced Materials, 2024, 36, 2403785.

[12]. Jiajia Zha, Shuhui Shi, Apoorva Chaturvedi, Haoxin Huang, Peng Yang, Yao Yao, Siyuan Li, Yunpeng Xia, Zhuomin Zhang, Wei Wang, Huide Wang, Shaocong Wang, Zhen Yuan, Zhengbao Yang, Qiyuan He, Huiling Tai, Edwin Hang Tong Teo, Hongyu Yu, Johnny C Ho, Zhongrui Wang, Hua Zhang, Chaoliang Tan. Electronic/Optoelectronic Memory Device Enabled by Tellurium‐based 2D van der Waals Heterostructure for in‐Sensor Reservoir Computing at the Optical Communication Band. Advanced Materials 2023, 35, 22111598.

[13]. Huide Wang#, Haoxin Huang#, Jiajia Zha, Yunpeng Xia, Peng Yang, Yonghong Zeng, Yi Liu, Rui Cao, Bing Wang, Wei Wang, Long Zheng, Ye Chen, Qiyuan He, Xing Chen, Ke Jiang, Ja‐Hon Lin, Zhe Shi, Johnny C Ho, Han Zhang*, Chaoliang Tan*. Asymmetrically Contacted Tellurium Short‐Wave Infrared Photodetector with Low Dark Current and High Sensitivity at Room Temperature. Advanced Optical Materials 2023, 11, 2301508.

[14]. Zhiyuan Shi^#, Xiujun Wang^#, Qingtian Li,Peng Yang, Guangyuan Lu, Ren Jiang, Huishan Wang, Chao Zhang, Chunxiao Cong, Zhi Liu, Tianru Wu*, Haomin Wang*, Qingkai Yu, Xiaoming Xie. Vapor–Liquid–Solid growth of large area multilayer hexagonal boron nitride on dielectric substrates. Nature communications 2020, 11, 849(1-8).

[15]. Guangyuan Lu^#, Tianru Wu^#, Peng Yang, Yingchao Yang, Zehua Jin, Weibing Chen, Shuai Jia, Haomin Wang, Guanhua Zhang, Julong Sun, Pulickel M Ajayan, Jun Lou*, Xiaoming Xie*, Mianheng Jiang. Synthesis of high-quality graphene and hexagonal boron nitride in-plain heterostrcucture on Cu-Ni alloy. Advanced Science 2017, 4, 1700076. 

专利

[1]. p型碲硒合金半导体的制备方法(专利号：2023108314330)

[2]. 基于衬底硫化预处理的单层二硫化钼的制备方法.(专利号: 201910705361.9)

[3]. 一种低维碲晶体的制备方法(专利号：202210252141.7)

[4]. 一种LED微显示模组及其制作方法(专利号：202411340170.4)

科研项目

[1]. 国家自然科学基金青年科学项目，主持，在研

[2]. 深圳市基础研究专项高等院校稳定支持项目，主持，在研

获奖荣誉

2020年复旦大学优秀毕业生

主讲课程

《集成电路制备工艺》、《大学化学》、《集成电路制备工艺实践Ⅰ》、《半导体物理与器件》、《数字信号处理实验》